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metal-oxide-semiconductor structure

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silver

Type Single Compound
Formula Ag
Role layer
2

germanium

Type Single Compound
Formula Ge
Role layer
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role layer
4

InxGa1-xN@GaN core-shell/GaN nanorods

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
energy density distribution

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silver
  1. fA96dNvSKlsmRi7KQ
Product

metal-oxide-semiconductor structure

Thickness: 20 nm

Thickness: 5 nm

Thickness: ~ 1.5 nm

Medium/Support: none

References

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