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GaAs waveguide with single layer of InGaAs quantum dots

Based on

1 Articles
2015 Most recent source

Composition

1

amorphous silicon

amorphous Si a-Si:H a-Si aSi
Type Single Compound
Formula Si
Role layer
2

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role layer
3

aluminium gallium arsenide

gallium aluminium arsenide Al0.8Ga0.2As AlGaAs
Type Single Compound
Formula Ga0.2Al0.8As
Role layer
4

GaAs waveguide with single layer of InGaAs quantum dots

GaAs waveguide with single layer of InGaAs QD
Type Nano Material
Formula
Role partial layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source

Details in source

Thickness: 1000 nm

Thickness: 2000 nm

Thickness: ~ 350000 nm

Medium/Support: none

Details in source

Thickness: 1000 nm

Thickness: 2000 nm

Thickness: ~ 350000 nm

Medium/Support: none

Details in source

Thickness: 1000 nm

Thickness: 2000 nm

Thickness: ~ 350000 nm

Medium/Support: none

Details in source

Thickness: 1000 nm

Thickness: 2000 nm

Thickness: ~ 350000 nm

Medium/Support: none

Details in source

Thickness: 1000 nm

Thickness: 2000 nm

Thickness: ~ 350000 nm

Medium/Support: none

No matching record found

Applications

Area Application Nanomaterial Variant Source

quantum optical circuit

Thickness: 1000 nm

Thickness: 2000 nm

Thickness: ~ 350000 nm

Medium/Support: none

quantum optical circuit

Thickness: 1000 nm

Thickness: 2000 nm

Thickness: ~ 350000 nm

Medium/Support: none

No matching record found

Characterization

Method Nanomaterial Variant Source

Thickness: 1000 nm

Thickness: 2000 nm

Thickness: ~ 350000 nm

Medium/Support: none

Thickness: 1000 nm

Thickness: 2000 nm

Thickness: ~ 350000 nm

Medium/Support: none

No matching record found

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Starting materials
  • arsenic
  • low temperature gallium arsenide
  • aluminium
See all (4)
solid source molecular beam epitaxy (MBE)
1
solid source molecular beam epitaxy (MBE)
2
  • arsenic
  • gallium
solid source molecular beam epitaxy (MBE)
3
  • arsenic
  • indium
  • gallium
solid source molecular beam epitaxy (MBE)
4
  • arsenic
  • gallium
native oxide removing
5
  1. HCl
photolithography
6
wet etching
7
  1. citric acid/H2O2 solution
chemical and mechanical polishing
8
  1. 5% Br2/CH3OH solution
e-beam evaporation
9
  • silicon
Product

GaAs waveguide with single layer of InGaAs quantum dots

Thickness: 1000 nm

Thickness: 2000 nm

Thickness: ~ 350000 nm

Medium/Support: none

References

Journal articles

Reithmaier, G.; Kaniber, M.; Flassig, F.; Lichtmannecker, S.; Müller, K.; Andrejew, A.; Vučković, J.; Gross, R.; Finley, J. J. (2015)
On-Chip Generation, Routing, and Detection of Resonance Fluorescence

Nano Lett., vol. 15, issue 8, pp 5208 - 5213


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