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surface-modified GaAs substrate with SACNT-morphology

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-GaAs

Type Complex Compound
Formula
Role layer
2

AlGaInP

Type Complex Compound
Formula
Role layer
3

p-GaAs

Type Complex Compound
Formula
Role layer
4

p-GaAs nanowires

p-GaAs NW
Type Nano Material
Formula
Role layer

Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
  1. crLY3KaVPu14Lse2CruUQBJ56jNo
  2. Hi02
Product

surface-modified GaAs substrate with SACNT-morphology

Height: ~ 35 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
  1. iKAn0yMDm6nEOFfp5H9qGBRXBBgd
  2. jhVV
Product

surface-modified GaAs substrate with SACNT-morphology

Height: ~ 105 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
  1. OaPC2cjkgIQYe7y3N7Io1KyKIvp1
  2. 9CHm
Product

surface-modified GaAs substrate with SACNT-morphology

Height: ~ 95 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
  1. NhsN1GMTQHKvdyswOuhV7wNHEndA
  2. Aneo
Product

surface-modified GaAs substrate with SACNT-morphology

Height: ~ 20 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
  1. CMlArun8QcxckzhPDpwX6AzUAojU
  2. IZiL
Product

surface-modified GaAs substrate with SACNT-morphology

Height: ~ 80 nm

Medium/Support: none

References

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