Loading ...

loading effect-induced single-layer/trench-like thin metallic structure

Based on

4 Articles
2 Patents
2017 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
2

aluminium

aluminum
Type Single Compound
Formula Al
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
irradiation-induced heating

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
diagnostics

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
field emission scanning electron microscopy

More information/entries available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
Product

loading effect-induced single-layer/trench-like thin metallic structure

Hole depth: ~ 1000 nm

Hole period: 500 nm

Hole width at top surface: 230 nm

Thickness: ~ 12 - ~ 50 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
Product

loading effect-induced single-layer/trench-like thin metallic structure

Hole depth: 1150 nm

Hole period: 600 nm

Hole width at bottom surface: 240 nm

Hole width at top surface: 360 nm

Thickness: ~ 12 - ~ 50 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
Product

loading effect-induced single-layer/trench-like thin metallic structure

Hole depth: ~ 1000 nm

Hole period: 800 nm

Hole width at top surface: 360 nm

Thickness: ~ 12 - ~ 50 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
Product

loading effect-induced single-layer/trench-like thin metallic structure

Hole depth: ~ 1000 nm

Hole period: 400 nm

Hole width at top surface: 190 nm

Thickness: ~ 12 - ~ 50 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
Product

loading effect-induced single-layer/trench-like thin metallic structure

Hole depth: 1150 nm

Hole period: 800 nm

Hole width at top surface: 460 nm

Thickness: ~ 12 - ~ 50 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:


Sign up for a free trial