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heterostructure of 5 QL thick (Bi0.36Sb0.64)2Te3 on atomically flat YIG film

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

yttrium iron garnet

garnet ferrite YIG
Type Single Compound
Formula Y3Fe5O12
Role layer
2

(Bi0.36Sb0.64)2Te3 quintuple layer

Type Nano Material
Formula
Role partial layer
3

tellurium

Type Single Compound
Formula Te
Role partial layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
anomalous Hall effect conductivity

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Applications

Area Application Nanomaterial Variant Source
magnetic materials

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Preparation

Method 1

Type: Chemical synthesis
Source:
  1. N6TwpK69CbTnkFn0
  2. MJcfRl
Product

heterostructure of 5 QL thick (Bi0.36Sb0.64)2Te3 on atomically flat YIG film

Thickness: 10 nm

Thickness: ~ 20 nm

Medium: none

Support: gallium gadolinium garnet

References

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