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In-Ga-Zn-O capped surface-oxidized porous Si nanowire arrays

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

surface-oxidized porous Si nanowire arrays

Type Nano Material
Formula
Role layer
2

a-IGZO

Type Complex Compound
Formula
Role layer

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
  1. lG23ZjujHxaBFC84LlLwz
  2. YWE3eBXF
  3. 2hv160W
  4. I3BO
Product

In-Ga-Zn-O capped surface-oxidized porous Si nanowire arrays

Thickness: ~ 4600 nm

Medium: none

Support: B-doped Si

Method 2

Type: Physical formation
Source:
  1. YulO0sFjWgkv6kFBkqnAK
  2. EowLlhWE
  3. rgp1jxU
  4. WRqt
Product

In-Ga-Zn-O capped surface-oxidized porous Si nanowire arrays

Thickness: 3700 nm

Medium: none

Support: B-doped Si

Method 3

Type: Physical formation
Source:
  1. SPXd3UwR9s1XIrOO53qYX
  2. 2PDYkmN1
  3. 5cuJfpb
  4. 2n4e
Product

In-Ga-Zn-O capped surface-oxidized porous Si nanowire arrays

Thickness: 7600 nm

Medium: none

Support: B-doped Si

Method 4

Type: Physical formation
Source:
  1. Tlx2FlFYQ6bRFv9JRiSgg
  2. qQ0W5EZP
  3. UU9FRPt
  4. ueC6
Product

In-Ga-Zn-O capped surface-oxidized porous Si nanowire arrays

Thickness: ~ 6000 nm

Medium: none

Support: B-doped Si

References

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