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GaAs/AlGaAs core-shell nanowires

Based on

1 Articles
2015 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role core
2

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.33Ga0.67As GaAlAs
Type Single Compound
Formula Al0.33Ga0.67As
Role layer
3

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.33Ga0.67As GaAlAs
Type Single Compound
Formula Al0.33Ga0.67As
Role layer
4

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.33Ga0.67As GaAlAs
Type Single Compound
Formula Al0.33Ga0.67As
Role layer
5

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
6

silicon

Type Single Compound
Formula Si
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
complex photoconductivity imaginary part spectrum dependent on excitation photon fluence

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
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Product

GaAs/AlGaAs core-shell nanowires

Diameter: ~ 50 nm

Edge: ~ 70 nm

Thickness: 12 nm

Thickness: 5 nm

Medium/Support: none

References

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