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extreme ultraviolet interference lithography transmission mask

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon nitride

Type Single Compound
Formula Si3N4
Role raw materials
2

chromium

Type Single Compound
Formula Cr
Role layer
3

gold

Type Single Compound
Formula Au
Role layer
4

nickel

Type Single Compound
Formula Ni
Role layer

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 11QITQrCpY
Product

extreme ultraviolet interference lithography transmission mask

Thickness: 120 nm

Thickness: 2 nm

Thickness: 250 nm

Thickness: 5 nm

Medium: none

Support: Si wafer

References

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