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P2TDC17FT4 bottom gate top contact field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

thin film of P2TDC17FT4

P2TDC17FT4 thin film P2TDC17FT4 film
Type Nano Material
Formula
Role layer
2

gold

Type Single Compound
Formula Au
Role partial layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • PTS-treated Si/SiO2
  1. bw0Srh0dOPhk0Z
Product

P2TDC17FT4 bottom gate top contact field-effect transistor

Thickness: 40 nm

Medium: none

Support: PTS-treated Si/SiO2

Method 2

Type: Physical formation
Source:
Starting materials
  • PTS-treated Si/SiO2
  1. fzdHCXjcwYlxdZ
Product

P2TDC17FT4 bottom gate top contact field-effect transistor

Thickness: 40 nm

Medium: none

Support: PTS-treated Si/SiO2

References

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