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p-type Si nanowire array

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gold

Type Single Compound
Formula Au
Role layer
2

n+-type Si nanowires

Type Nano Material
Formula
Role layer

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
  1. WVOf4tdUXLhsU
  2. 5RoaCzHBULloVS
  3. XDqVL
  4. 4aXuiEU47A3AromjZaM
  5. cKP8C9nCVLHJ3I2T9hC
  6. BnkLoq
Product

p-type Si nanowire array

Array pitch: ~ 400 nm

Thickness: 20 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
  1. icXjQ5Nhtg5nD
  2. L75IS7c2p0JCwB
  3. 3NqUPLFI4FLidKSTH8SPhX
  4. x8FcViK0IXZthZeALkz
  5. mrUVBD
Product

p-type Si nanowire array

Array pitch: 370 - 380 nm

Thickness: 20 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
  1. ba47OOKrU0bVx
  2. TXiMlQmJsKtAkm
  3. DPvQJ
  4. sBLsDQLksqTpSX4bWzq
  5. ITIWR7iNPiKxEHTzFAAPMYOAJY
  6. EPeCTU
Product

p-type Si nanowire array

Array pitch: ~ 400 nm

Thickness: 20 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
  1. kRTq9I4c2l1M5
  2. DBsyAUgslIV0PF
  3. 2OkxN
  4. I8iaTOb70QzmcVcr2tC9t
  5. t0D6ZSbFT6rkWd9CU2Y5Kzwpu4
  6. WN5yHj
Product

p-type Si nanowire array

Array pitch: ~ 410 nm

Thickness: 20 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
  1. dVGOBfmGTku6d
  2. rwfSlombqFjjEZ
  3. ZBVyR
  4. vDUkExjabbRSOLKROlSJm
  5. yJ1vK6BXtxW60bOA5np
  6. Wzyfr
Product

p-type Si nanowire array

Array pitch: ~ 410 nm

Thickness: 20 nm

Medium/Support: none

References

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