Loading ...

p-type Si nanowire array

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gold

Type Single Compound
Formula Au
Role layer
2

p-type Si nanowires

Type Nano Material
Formula
Role layer

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

More information available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
  1. 3lYz5KbmpWg8S
  2. VznkzHDOGS0dVX
  3. ZAlRO
  4. yNIpfbtzQsnf8o1RzVq
  5. b7wghE2IaMVd8bVs8fY
  6. l120wB
Product

p-type Si nanowire array

Array pitch: ~ 400 nm

Thickness: 20 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
  1. 77yehXI2EWOcZ
  2. qCxpRIaGyFy4yn
  3. FZeXsw5ZRHDRbZRvY9h4U4
  4. RKOB2sAR34SqLLI81ud
  5. UoEtb4
Product

p-type Si nanowire array

Array pitch: 370 - 380 nm

Thickness: 20 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
  1. VRMRdJqKKtuKU
  2. Lbqo7uXCFrAk8h
  3. coo7m
  4. AR0SseeESZb8Fx26R7z
  5. UfCkJh6NOVKsCGlcWewrSbEdq2
  6. rHKDKG
Product

p-type Si nanowire array

Array pitch: ~ 400 nm

Thickness: 20 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
  1. 2Qi23fttLuEaV
  2. 350TFg3OklFkmH
  3. Fzz2S
  4. VNSZNC24TNd4pUtqN6vdd
  5. xVN39woS5d63hIsjJqjl2XhXJ2
  6. xKKluO
Product

p-type Si nanowire array

Array pitch: ~ 410 nm

Thickness: 20 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
  1. X6XBKFlsugiKW
  2. kYOyvoIT4rvQ75
  3. yeEMs
  4. T0D9vuIWx4WidgSW4gxSE
  5. 9rWLgGh1lJ6lpjT6J4V
  6. HUAam
Product

p-type Si nanowire array

Array pitch: ~ 410 nm

Thickness: 20 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:


Sign up for a free trial