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In0.1Ga0.9As/GaAs nanomembrane

Based on

1 Articles
2014 Most recent source

Composition

1

aluminium(III) arsenide

aluminium arsenide aluminum arsenide
Type Single Compound
Formula AlAs
Role partial layer
2

indium gallium arsenide/gallium arsenide bilayer

In0.1Ga0.9As/GaAs bilayer InGaAs/GaAs bilayer
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
elastic energy profile

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Applications

Area Application Nanomaterial Variant Source
membranes

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
  1. f7sftCx8juUt7TyRBg7iOQ
  2. nWbvHzlZzmO13JFwQ4bB7RAY
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Wrinkle periodicity: 105000 - 143000 nm

Medium: none

Support: low temperature gallium arsenide

Method 2

Type: Chemical synthesis
Source:
  1. 047nGeF53iZR0Bq9QSdDMk
  2. UfRxuTm6xjby1Dq0fR9pzHX
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Wrinkle periodicity: 66000 - 86000 nm

Medium: none

Support: low temperature gallium arsenide

Method 3

Type: Chemical synthesis
Source:
  1. JkosaayELvtKPCLai1OJVJ
  2. 8uM1EGqfPWGbSDApZBz9UIF
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Wrinkle periodicity: ~ 35000 nm

Medium: none

Support: low temperature gallium arsenide

Method 4

Type: Chemical synthesis
Source:
  1. VSgtRdvRbaeTD2Czf3htOA
  2. vNzYcf12fhZHMviFaRjv1Si
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Wrinkle periodicity: 27000 - 33000 nm

Medium: none

Support: low temperature gallium arsenide

Method 5

Type: Chemical synthesis
Source:
  1. dtcPIuyNKvTxgLhUnUfzZU
  2. c5aARexi2eHkare6EsBFSx6
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Wrinkle periodicity: ~ 20000 nm

Medium: none

Support: low temperature gallium arsenide

References

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