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gallium arsenide-capped indium gallium selenide nanoneedles

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium selenide

Type Single Compound
Formula In0.16Ga0.84As
Role core
2

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tertiary-butyl-arsine
  • triethyl-gallium
  • trimethylindigane
Product

gallium arsenide-capped indium gallium selenide nanoneedles

Thickness: 30 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • tertiary-butyl-arsine
  • triethyl-gallium
  • trimethylindigane
Product

gallium arsenide-capped indium gallium selenide nanoneedles

Thickness: 60 nm

Medium/Support: none

References

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