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Zn-doped InP nanowires

Based on

11 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role raw materials
2

sulphur

sulfur
Type Single Compound
Formula S
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier concentration

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Applications

Area Application Nanomaterial Variant Source
electrodes/electrolytes

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. 0gHl9nxmdMQfkYEohdNYVIzx5mNk
  2. zDefoL
Product

Zn-doped InP nanowires

Diameter: ~ 65 nm

Length: ~ 4200 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • dihydrogen monosulfide
  • trimethylindigane
  1. kDvGHSfgjxVbkK7Asl4XNzV9
  2. 4DWhJRO
  3. L15jppGnactGWItxSKb
  4. b9KQqRxMqogbx8MyK
Product

Zn-doped InP nanowires

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • p-doped InP substrate
  • phosphine
  • diethylzinc
See all (4)
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  2. uTTT3dX
  3. hX1989D2vKlaiUQtjJP
  4. LxhxIIKbTFBDRHlb6
Product

Zn-doped InP nanowires

Size: not specified

Medium: none

Support: p-doped InP substrate

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • diethylzinc
  • trimethylindigane
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  2. qsZB0H9
  3. GfZ8ecMIv2MJNy6btPF
  4. w4MMMf2ymVpxWrvGG
Product

Zn-doped InP nanowires

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  1. nFCeboyIZpOclQrQrWOWJoSOfgt9YN2Hu
  2. w8T03y
  3. m4P
Product

Zn-doped InP nanowires

Base diameter: ~ 600 nm

Length: ~ 4000 nm

Tip diameter: ~ 20 nm

Medium: none

Support: p-doped silicon

References

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