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gold/titanium/indium gallium arsenide phosphide/indium phosphide/indium gallium arsenide on indium phosphide substrate nanostructures

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium-indium arsenide

gallium-indium arsenide InGaAs
Type Complex Compound
Formula
Role layer
2

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role layer
3

indium gallium arsenide phosphide nanoridge

InGaAsP nanoridge
Type Nano Material
Formula
Role partial layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
coupling efficiency

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Preparation

Method 1

Type: Physical formation
Source:
  1. wLxxUI1MHzrFc9h32rvndKNBfxiDcXeVIZMdLDGdWc9xxpEZmVLwPmnKeIcVkOWlGhxWKQpWbfXZZos4EA7H9V959lpLHwPTvfSYAJu
Product

gold/titanium/indium gallium arsenide phosphide/indium phosphide/indium gallium arsenide on indium phosphide substrate nanostructures

Length: 50000 nm

Thickness: 320 nm

Width: 3000 nm

Medium: none

Support: indium(III) phosphide

Method 2

Type: Physical formation
Source:
  1. NYWn9V69fk38nGqRG3iOBlA3w3ulmXFyTBUQDlM8UUkAoGBMWuKg4atgIQAC7LKPotPovKrxDccCFkEG5UBsVWVI7BhoGnmVgQW6xj0
Product

gold/titanium/indium gallium arsenide phosphide/indium phosphide/indium gallium arsenide on indium phosphide substrate nanostructures

Length: 50000 nm

Thickness: 320 nm

Width: 880 nm

Medium: none

Support: indium(III) phosphide

References

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