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SiOxCyFz thin film

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

fluorinated silica

SiOxCyFz
Type Complex Compound
Formula
Role raw materials
2

atomic hydrogen

hydrogen atom
Type Single Compound
Formula H
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
absorption coefficient

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • oxygen
  • silicic acid tetraethyl ester
  • carbon tetrafluoride
  1. Jhl6IGTWxhkTuVZGAqGpTuLv8cPQwe
Product

SiOxCyFz thin film

Thickness: 50 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • carbon tetrafluoride
  • oxygen
  • silicic acid tetraethyl ester
  1. Nz6V0XuHOE92R7m0LgLg1nMZWF4iDEofkyBOgIZ
Product

SiOxCyFz thin film

Thickness: 50 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • oxygen
  • carbon tetrafluoride
  • silicic acid tetraethyl ester
  1. mH0wifYv8Ie71VoXykDZmUEzs9wVYh
Product

SiOxCyFz thin film

Roughness: 2.5 nm

Thickness: 50 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • oxygen
  • carbon tetrafluoride
  • silicic acid tetraethyl ester
  1. UAd9nPOG72s2sbJgMVzJ25XaG8Qgv1dIww7F8oL
Product

SiOxCyFz thin film

Roughness: 2.5 nm

Thickness: 50 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • oxygen
  • silicic acid tetraethyl ester
  • carbon tetrafluoride
  1. qcyytghXwcWFtzTv83JZIBrEvPGR50
Product

SiOxCyFz thin film

Roughness: 0.3 nm

Thickness: 50 nm

Medium/Support: none

References

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