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mesoporous n++-Si layer

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

phosphorus-doped silicon

n++-Si
Type Complex Compound
Formula
Role raw materials

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • phosphorus-doped silicon
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  2. JRIG2cl69XSRvfEk580b0Bh
  3. 32oqgaCRAn2Mrx7KMkArS
  4. tYTV8ml
  5. V4PXxrXAt4XEJjRc
  6. xrcGH90lJa4iSiItVik6V
Product

mesoporous n++-Si layer

Diameter: ~ 7 nm

Thickness: ~ 345 nm

Medium: none

Support: phosphorus-doped silicon

Method 2

Type: Physical formation
Source:
Starting materials
  • phosphorus-doped silicon
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  2. bm62fHSCbQw0d3gGE1SbF
  3. AYFr
  4. xCQnETqcCGdXjsge
  5. dwbGtokln2UDb1YTOzgYd
Product

mesoporous n++-Si layer

Diameter: ~ 45 nm

Thickness: > 1000 nm

Medium: none

Support: phosphorus-doped silicon

References

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