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indirect gap semiconductor WS2 nanostructures

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

WS2 nanosheets

Type Nano Material
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
optical band gap energy

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Applications

Area Application Nanomaterial Variant Source
catalysis

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • sodium sulphide monohydrate
  • pertungstic acid sodium salt dihydrate
  1. IX5pTRKvHsV2wxOgnru5zdiABbcu2Z0C8BWUvPBm8i64A
  2. afKfQqCsxdUGPw3FLUuTwyIxEk
Product

indirect gap semiconductor WS2 nanostructures

Diameter: ~ 500 - 600 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • sodium sulphide monohydrate
  • pertungstic acid sodium salt dihydrate
  1. WT9Q47mt21WX9SD3uSwy4zyxWpoONJOScilEuft4FW0ik
  2. wQWDbjJYLIq3u65qO0v3JVhvXm
Product

indirect gap semiconductor WS2 nanostructures

Diameter: ~ 200 - 300 nm

Medium/Support: none

References

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