Loading ...

single heterojunction indium gallium nitride nanostructure material

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium(III) nitride

gallium nitride
Type Single Compound
Formula GaN
Role layer
2

indium gallium nitride thin film

InGaN thin film
Type Nano Material
Formula
Role layer

Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

More information/entries available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium(III) nitride
  • c-plane sapphire
  1. aClYvcm
Product

single heterojunction indium gallium nitride nanostructure material

Thickness: ~ 2000 nm

Medium: none

Support: c-plane sapphire

Method 2

Type: Physical formation
Source:
Starting materials
  • c-plane sapphire
  • gallium(III) nitride
  1. 43J3nMK
Product

single heterojunction indium gallium nitride nanostructure material

Thickness: ~ 2000 nm

Medium: none

Support: c-plane sapphire

Method 3

Type: Physical formation
Source:
Starting materials
  • c-plane sapphire
  • gallium(III) nitride
  1. IURkq9Y
Product

single heterojunction indium gallium nitride nanostructure material

Thickness: ~ 2000 nm

Medium: none

Support: c-plane sapphire

References

Full content is available to subscribers only

To view content please choose from the following:


Sign up for a free trial