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InSb/Ga nanopillars

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium(III) antimonide

indium antimonide
Type Single Compound
Formula InSb
Role core
2

Ga/In-rich layer

Type Nano Material
Formula
Role layer
3

Ga/In-enriched material

Type Complex Compound
Formula
Role layer

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium(III) antimonide
  • gallium
  1. OlTGcP
Product

InSb/Ga nanopillars

Height: ~ 920 nm

Width: ~ 220 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • indium(III) antimonide
  • gallium
  1. C1o39
Product

InSb/Ga nanopillars

Height: ~ 300 nm

Width: ~ 110 nm

Medium: none

Support: indium(III) antimonide

References

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