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nanoporous gallium nitride thin film

Based on

4 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Si-doped gallium nitride

Ga-polar Si doped GaN Si-doped GaN n-GaN
Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
compressive strain relaxation dependent on film depth

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-GaN
  1. UKqbzft8bfFiQWb
Product

nanoporous gallium nitride thin film

Pore size: ~ 3 - ~ 70 nm

Roughness: 0.15 nm

Thickness: ~ 2000 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • Si-doped GaN
  1. Dm1g46zvJlf6ZpOVNM4D8tlZA0iQ1rpVfy
Product

nanoporous gallium nitride thin film

Pore diameter: ~ 60 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • Si-doped GaN
  1. 8pE2IoXC1Jz0MrQE70Gcn0cumSra4Zgmyx
Product

nanoporous gallium nitride thin film

Pore diameter: ~ 24.5 nm

Thickness: ~ 1000 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • Si-doped GaN
  1. oP084cSNP1OVwjR7Ljjd2jyx5pcmhaEfC9
Product

nanoporous gallium nitride thin film

Pore diameter: ~ 40 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
  1. us3K5SY4kdcFJm2tw7FsBd4qP
Product

nanoporous gallium nitride thin film

Size: not specified

Medium/Support: none

References

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