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nanoporous gallium nitride thin film

Based on

4 Articles
2017 Most recent source

Composition

1

Si-doped GaN

Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
compressive strain relaxation dependent on film depth

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-GaN
  1. 7tu3xhzLhDqYjei
Product

nanoporous gallium nitride thin film

Pore size: ~ 3 - ~ 70 nm

Roughness: 0.15 nm

Thickness: ~ 2000 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • Si-doped GaN
  1. dPUDpsBkG4xwBSDLyWB0Un24atFROs2MKv
Product

nanoporous gallium nitride thin film

Pore diameter: ~ 60 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • Si-doped GaN
  1. qOhrp86C88tCDVKauhJb2IafiTBbplwE9k
Product

nanoporous gallium nitride thin film

Pore diameter: ~ 40 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • Si-doped GaN
  1. 1NSKoO3SXkssn7UJazqKbaKWP3JED5z3XE
Product

nanoporous gallium nitride thin film

Pore diameter: ~ 24.5 nm

Thickness: ~ 1000 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon-doped gallium nitride
  1. FMZbWY4Ex602PCpFsTrOiMYdA54ikoNIdQE6zVdhIHgxH3QbJj0ced4b
  2. LVmriJQqq7r2tFhZOlZp5ixjEEOrSNPQ1X
  3. KxQS
  4. Kzls7lcnLBxgcdV7D2px
Product

nanoporous gallium nitride thin film

Thickness: 2000 nm

Medium/Support: none

References

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