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nanoporous gallium nitride thin film

Based on

4 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Si-doped GaN

Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
compressive strain relaxation dependent on film depth

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-GaN
  1. 2rOHNb9Z0e6ErSu
Product

nanoporous gallium nitride thin film

Pore size: ~ 3 - ~ 70 nm

Roughness: 0.15 nm

Thickness: ~ 2000 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • Si-doped GaN
  1. 5XNo9Qm7Q5yARECZSaqauhlCeph8CwMVAP
Product

nanoporous gallium nitride thin film

Pore diameter: ~ 60 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • Si-doped GaN
  1. CCbRkTC8R8XgIaTJZoNvPF7gqJ4RuRYq6h
Product

nanoporous gallium nitride thin film

Pore diameter: ~ 24.5 nm

Thickness: ~ 1000 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • Si-doped GaN
  1. YQUKuVi3NwCb7GwyCLCoFMKKWp8PRDRsLk
Product

nanoporous gallium nitride thin film

Pore diameter: ~ 40 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
  1. WIxvDaDgnCQ8TBo3nR2QqY0mL
Product

nanoporous gallium nitride thin film

Size: not specified

Medium/Support: none

References

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