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In0.2Ga0.8As layer

Based on

2 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium arsenide

Type Single Compound
Formula In0.2Ga0.8As
Role raw materials

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
other

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
Product

In0.2Ga0.8As layer

Thickness: 2 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. Y8Sq0OkChMHQcfZ6TwEVd14PlxXhinutdjlOB5zWRtisy
  2. 05fYyco6rbqBjtsjFbIXtd
Product

In0.2Ga0.8As layer

Diameter: 6000 nm

Thickness: 20 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. b24qArcFV17cYSN9vFGpV6MgP9F3VegIbnjG333Xr1LRw
  2. mJQP3DGJRuNy4UIZxKjsDe
Product

In0.2Ga0.8As layer

Length: ~ 6000 nm

Thickness: 20 nm

Wrinkle height: 25 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. O25nMnchz344uSCebmpkMVaonuaHGyGTcTCkmUiWorLmy
  2. jVWxAshH6fS0X4JfxxoJ9a
Product

In0.2Ga0.8As layer

Length: > 10000 nm

Thickness: 20 nm

Width: ~ 6000 nm

Medium/Support: none

References

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