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TPD film

Based on

5 Articles
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine

N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,10-biphenyl-4,4'-diamine N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,10-biphenyl-4,4'-diamine N,N'-bis (3-methylphenyl)-N,N'-bis-(phenyl)-benzidine N,N'-bis(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine N,N';- bis(4-butylphenyl)-N,N';-bis(phenyl)benzidine N,N';-bis (3-methylphenyl)-N,N';-diphenylbenzidine N,N'-bis (3-methylphenyl)-N,N'-diphenylbenzidine N,N'-bis(3-methylphenyl)-N,N,-diphenylbenzidine N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine N,N'-diphenyl-N,N'-di(m-tolyl)-4-benzidine 4,4'-bis-(m-tolyphenylamino)biphenyl α-NPD TPD
Type Single Compound
Formula C38H32N2
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation barrier for surface diffusion

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Characterization

Method Nanomaterial Variant Source
ellipsometry

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine
  1. vsX8zgGniFwLYh44
Product

TPD film

Thickness: 26 nm

Medium: none

Support: SiO2/Si

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine
  1. iLRzNGaJRZTuc2Z0
Product

TPD film

Thickness: 26.5 nm

Medium: none

Support: SiO2/Si

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine
  1. frUuPzKfv04hCdw0
Product

TPD film

Thickness: ~ 22 nm

Medium: none

Support: SiO2/Si

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine
  1. 3UG1vYOyARBxQI3K
Product

TPD film

Thickness: 15 nm

Medium: none

Support: SiO2/Si

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine
  1. 8AJXIZw2RwEuIaQK
Product

TPD film

Thickness: ~ 100 nm

Medium: none

Support: SiO2/Si

References

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