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Sm3+-implanted GaN film

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

Sm3+-implanted GaN

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
coercive field dependent on annealing temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium nitride
  • trivalent samarium ion
  1. zO7oBKpQArivpY6JeNGlfGFWJm69YSRgI7Mw2jIB8QCt
Product

Sm3+-implanted GaN film

Thickness: 3000 nm

Thickness: < 100 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • gallium nitride
  • trivalent samarium ion
  1. a7YUMBpB8lWOb3iYIb8lMJ4BI6vjfvUQB4QkUPHuwbD3
Product

Sm3+-implanted GaN film

Thickness: 3000 nm

Thickness: < 100 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • gallium nitride
  • trivalent samarium ion
  1. GnTyAOsCxF9sMEp10O5W648du5bAkOTjxLJE9TPoZv4z
Product

Sm3+-implanted GaN film

Thickness: 3000 nm

Thickness: < 100 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • gallium nitride
  • trivalent samarium ion
  1. DQTpGsoCwkO9SN2SfnptKAHGm9zUvLjRpb3dc7myyJoQ
Product

Sm3+-implanted GaN film

Thickness: 3000 nm

Thickness: < 100 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • gallium nitride
  • trivalent samarium ion
  1. Ed0iqmNKpocssyQWHfbFcchca4NRU3NgLZLvTi7g72TQ
Product

Sm3+-implanted GaN film

Thickness: 3000 nm

Thickness: < 100 nm

Medium/Support: none

References

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