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GaAs/Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As/GaAs nanowire

Based on

2 Articles
2015 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role core
2

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.30Ga0.70As
Role layer
3

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
4

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.30Ga0.70As
Role layer
5

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conductive band profile dependent on electronic state

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
energy dispersive X-ray spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic tetramer
  • gallium
  1. e0UH2zG
Product

GaAs/Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As/GaAs nanowire

Thickness: 10 nm

Thickness: 2 nm

Thickness: 30 nm

Medium/Support: none

References

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