Loading ...

Al/HfO2/p-Si metal-oxidee-semiconductor structure

Based on

1 Articles
2012 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium

aluminum
Type Single Compound
Formula Al
Role layer
2

p-doped silicon

p-Si
Type Complex Compound
Formula
Role layer
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role partial layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on temperature

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hafnium(IV) oxide
  • p-doped silicon
Product

Al/HfO2/p-Si metal-oxidee-semiconductor structure

Thickness: 1.5 nm

Thickness: 600000 nm

Thickness: 8.9 nm

Medium: none

Support: p-doped silicon

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial