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n+-type SiHx film

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

phosphorus-doped amorphous hydrated silicon

n+-a-SiHx
Type Complex Compound
Formula
Role raw materials

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • hydrogen
  • silicon hydride
  1. oydlIZ
  2. QLPeyiwMv1Mo9uWN11NAQsidbaxeSNhJ6vAwW
Product

n+-type SiHx film

RMS roughness: 2.073 nm

Roughness: 1.318 nm

Thickness: 33 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • hydrogen
  • silicon hydride
  1. ftWaYu
  2. Bxw1HZQjJLprITsaHyizQAK8fEIsWww470GUt
Product

n+-type SiHx film

RMS roughness: 1.824 nm

Roughness: 1.237 nm

Thickness: 33 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • hydrogen
  • silicon hydride
  1. hwZcI8
  2. 2kyJXSeOlP0JlBzvd46fVwXPqS8WVJKwbcEEd
Product

n+-type SiHx film

RMS roughness: 1.592 nm

Roughness: 0.936 nm

Thickness: 33 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • hydrogen
  • silicon hydride
  1. JtCuSk
  2. wLyBGXhcD9Jsw3QRfjsgmwbir6ZamjUdF80P5L
Product

n+-type SiHx film

RMS roughness: 1.421 nm

Roughness: 0.762 nm

Thickness: 33 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • hydrogen
  • silicon hydride
  1. PzIOoo
  2. BEvALJRV9wu4S463Ntwjogd8OCJh3wmmo2uqJ9
Product

n+-type SiHx film

RMS roughness: 1.356 nm

Roughness: 0.706 nm

Thickness: 33 nm

Medium/Support: none

References

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