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silicon nanowires

Based on

53 Articles
2 Patents
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-type silicon

Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Catalytic properties

Reaction Value Nanomaterial Variant Source
methyl orange photodegradation under UV light irradiation

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor for light spot position

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
field emission scanning electron microscopy

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scanning electron microscopy

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-type Si
  1. 5xdjELR
  2. uPyhRJ
Product

silicon nanowires

Diameter: ~ 80 nm

Height: ~ 2000 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p-Si
Product

silicon nanowires

Length: ~ 600 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • thermally oxidized n++Si
Product

silicon nanowires

Interpeak distance: 230 nm

Length: 6000 nm

Major diameter: 90 nm

Minor diameter: 65 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • thermally oxidized n++Si
Product

silicon nanowires

Interpeak distance: 630 nm

Length: 6000 nm

Major diameter: 290 nm

Minor diameter: 80 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • thermally oxidized n++Si
Product

silicon nanowires

Diameter: 65 - 125 nm

Interpeak distance: 130 nm

Medium/Support: none

References

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