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InGaN/GaN quantum well

Based on

26 Articles
3 Patents
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium nitride

InGaN
Type Complex Compound
Formula
Role layer
2

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN u-GaN i-GaN p-GaN
Type Single Compound
Formula GaN
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
lighting devices

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • gallium nitride film on sapphire substrate
  • trimethylindigane
See all (4)
  1. aeFMPU
Product

InGaN/GaN quantum well

Size: not specified

Medium: none

Support: gallium nitride film on sapphire substrate

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • gallium nitride film on sapphire substrate
  • trimethylindigane
See all (4)
  1. zRr3yf
Product

InGaN/GaN quantum well

Thickness: < 1 nm

Medium: none

Support: gallium nitride film on sapphire substrate

References

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