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Sb/N-doped GaAs quantum well

Based on

1 Articles
2014 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role raw materials
2

antimony

Type Single Compound
Formula Sb
Role dopant
3

atomic nitrogen

nitrogen atom
Type Single Compound
Formula N
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. aCgHhy
  2. zQx8Xyyv
Product

Sb/N-doped GaAs quantum well

Thickness: 7.5 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. 3J89cm
  2. X8GQnXkP
Product

Sb/N-doped GaAs quantum well

Thickness: 2.5 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. Ua1XRL
  2. 5RKxtaWM
  3. ICEYeRFdQASyKnJXnQLQ8OcAbaKWjc1iSc
Product

Sb/N-doped GaAs quantum well

Thickness: 5 nm

Medium/Support: none

References

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