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metal-oxide semiconductor structure

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

antimony-doped tin oxide

ATO
Type Complex Compound
Formula
Role layer
2

tetragonal zirconium(IV) oxide

tetragonal zirconium dioxide t-zirconium(IV) oxide t-zirconium dioxide tetragonal zirconia t-zirconia t-ZrO2
Type Single Compound
Formula ZrO2
Role layer
3

copper

Type Single Compound
Formula Cu
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density dependent on reset voltage

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Applications

Area Application Nanomaterial Variant Source
electromechanical switching

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ethanol
  • zirconium tetrabutoxide
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  2. ayVadtXt
Product

metal-oxide semiconductor structure

Crystallite size: ~ 3 - ~ 5 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • ethanol
  • zirconium tetrabutoxide
  1. ZzjpCi1ZXKQcSfNybYPyxOcV8oFVSEpePMOP
  2. utPKN5ZC
Product

metal-oxide semiconductor structure

Crystallite size: ~ 5 nm

Thickness: ~ 100 nm

Medium/Support: none

References

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