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InAs nanowires

Based on

103 Articles
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium(III) arsenide

indium monoarsenide indium arsenide
Type Single Compound
Formula InAs
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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photoluminescence
scanning electron microscopy
selected area electron diffraction
transmission electron microscopy
X-ray diffraction

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  1. jybjUhj6lOtm45VE3jePvOKI9WtTRLvf1NkRZoSAPDVR7fWyq9LTlRlmNMk
  2. JsC30K
Product

InAs nanowires

Diameter: ~ 100 nm

Length: 760 nm

Pitch: 330 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  1. q0VWpcjX3X9KBKBlbes8OxVbLD4dvq7
  2. xkRcZy3
Product

InAs nanowires

Diameter: ~ 60 - ~ 110 nm

Length: ~ 2300 - ~ 3400 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • arsine
  1. UzA3CdpKbdKNvsbL
  2. HyGpBvv2wEd
  3. SPiqRe
  4. 0JkGFp
Product

InAs nanowires

Diameter: 30 - 150 nm

Length: 16000 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
Product

InAs nanowires

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • indium
  • p-doped silicon
Product

InAs nanowires

Diameter: 50 - 100 nm

Length: ~ 1000 nm

Medium: none

Support: p-doped silicon

References

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