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Pt Schottky contacts on n-Al0.08In0.08 Ga0.84N grown on sapphire substrate

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role layer
2

n-Al0.08In0.08Ga0.84N

Type Single Compound
Formula Al0.08In0.08Ga0.84N
Role layer
3

platinum

Type Single Compound
Formula Pt
Role partial layer

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • aluminium nitride
  • sapphire
Product

Pt Schottky contacts on n-Al0.08In0.08 Ga0.84N grown on sapphire substrate

Arithmetic mean height: 5.59 nm

Auto-correlation length: 1420 nm

Extreme peak height: 11.7 nm

Five point peak height: 4.06 nm

Inverse areal material ratio: 8.90 nm

Maximum height: 32.5 nm

Maximum peak height: 19.7 nm

Maximum pit height: 12.8 nm

RMS roughness: 6.71 nm

Thickness: 100 nm

Thickness: 250 nm

Medium: none

Support: sapphire

Method 2

Type: Physical formation
Source:
  1. b07Gmv
  2. lMRWSZEQHFKw3sWytTLf6o
Product

Pt Schottky contacts on n-Al0.08In0.08 Ga0.84N grown on sapphire substrate

Arithmetic mean height: 8.67 nm

Auto-correlation length: 1530 nm

Extreme peak height: 14.9 nm

Inverse areal material ratio: 15.0 nm

Maximum height: 39.5 nm

Maximum peak height: 22.2 nm

Maximum pit height: 17.4 nm

RMS roughness: 10.2 nm

Thickness: 100 nm

Thickness: 250 nm

Medium: none

Support: sapphire

Method 3

Type: Physical formation
Source:
  1. sctt2l
  2. cE5vMBUa9tMy6EKKQESgUL
Product

Pt Schottky contacts on n-Al0.08In0.08 Ga0.84N grown on sapphire substrate

Arithmetic mean height: 7.33 nm

Auto-correlation length: 1810 nm

Extreme peak height: 15.7 nm

Inverse areal material ratio: 11.5 nm

Maximum height: 37.5 nm

Maximum peak height: 20.0 nm

Maximum pit height: 17.5 nm

RMS roughness: 8.61 nm

Thickness: 100 nm

Thickness: 250 nm

Medium: none

Support: sapphire

References

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