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PMA-LPD-SiON/(NH4)2S-treated InP MOS structure

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

PMA sulfur and fluorine passivated indium phosphide

Type Complex Compound
Formula
Role layer
2

PMA fluorine passivated silicon oxynitride

Type Complex Compound
Formula
Role layer
3

aluminium

aluminum
Type Single Compound
Formula Al
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on frequency

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

PMA-LPD-SiON/(NH4)2S-treated InP MOS structure

Thickness: 5.4 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

PMA-LPD-SiON/(NH4)2S-treated InP MOS structure

Thickness: 5.4 nm

Medium/Support: none

References

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