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nanohole array

Based on

14 Articles
2018 Most recent source

Composition

1

hydrogenated silicon

Si:H
Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for dark conductivity

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
temperature sensor

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. oA9uNPzCR8ea3gyJqMEqLfJzsf29LuAyaIhptMF6Hkkk1lY75XMcTGB3QRu
  2. m02InJa
Product

nanohole array

Dot diameter: 300 nm

Dot pitch: 400 nm

Dot spacing: 100 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. 6fynGDTmQh4Q8vSHa7KOf8gKT9tAN5VlH2ZuOXqMIhSw6Bo0DWbbwk7Icmj
  2. ee79XQW
Product

nanohole array

Dot diameter: 100 nm

Dot pitch: 1000 nm

Dot spacing: 900 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. aKLGGRsieWOIRUmabNEetSpN8V4TzaS0GyzdrfMlegYzrbclJtKk5ZnS1s3
  2. eDInQgH
Product

nanohole array

Dot diameter: 200 nm

Dot pitch: 300 nm

Dot spacing: 100 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. uHEFmhNyH8xnQzduIaLrJzyYmSs3tNzKwC1D7dstRf9oSUQLx97YqSYHPHK
  2. O8eZaQ6
Product

nanohole array

Dot diameter: 900 nm

Dot pitch: 1000 nm

Dot spacing: 100 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. W95JcQWwDknE1Eu02oFZUKUg3DW7jWQmMfPhjSeuxPt7cuRpwFDDJH0X0Va
  2. 9sTmgRh
Product

nanohole array

Dot diameter: 100 nm

Dot pitch: 200 nm

Dot spacing: 100 nm

Medium/Support: none

References

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