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nanohole array

Based on

13 Articles
2017 Most recent source

Composition

1

P-doped silicon

Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for dark conductivity

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
temperature sensor

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. wuJgQHRs66NyhtVpwd7DF40VF8bw3PMZJ9Yy06oCuxMmPGWDzxwIhaVCYZW
  2. eTud2Ex
Product

nanohole array

Dot diameter: 300 nm

Dot pitch: 400 nm

Dot spacing: 100 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. AeZhpUNdJnJRtdDx5CjqECVWUsO7mZU5sEpTzYVMMaTXYuWdIpznKI6kk36
  2. BjfTUVz
Product

nanohole array

Dot diameter: 100 nm

Dot pitch: 1000 nm

Dot spacing: 900 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. EcybbR65kmOCPnoh5eo9UfmPUTwY85deq5HK1XlCcISWDt1wxoOIImMiUxw
  2. fXqAvLl
Product

nanohole array

Dot diameter: 200 nm

Dot pitch: 300 nm

Dot spacing: 100 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. zGVct1PvrL7ChTPhZlPDTjnmIBVwq2wSKMykhPKt3xqItyrUZsn6hI25kVF
  2. 181QjHo
Product

nanohole array

Dot diameter: 900 nm

Dot pitch: 1000 nm

Dot spacing: 100 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. 8dm97jmV1vUfL2rwrseT3LhsmTj6FquzLfAgJBR84F6N2yOy9vlJ5h2Cb39
  2. mCSxfJ7
Product

nanohole array

Dot diameter: 100 nm

Dot pitch: 200 nm

Dot spacing: 100 nm

Medium/Support: none

References

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