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shell-doped GaAs:Si NW with GaAs layer on bottom

Based on

1 Articles
2012 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

shell-doped GaAs:Si nanowires

shell-doped GaAs:Si NW
Type Nano Material
Formula
Role layer
2

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Characterization

Method Nanomaterial Variant Source
Raman spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
See all (4)
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  2. r1q8Rh6LJz4GY0z8tX
  3. c88POvvIzXdDByp5IcN7fZ
  4. 4SD9rswPc92JzjoC67Nk2u1TsP
Product

shell-doped GaAs:Si NW with GaAs layer on bottom

Thickness: 100 nm

Medium: none

Support: Si/SiO2

Method 2

Type: Chemical synthesis
Source:
Starting materials
See all (4)
  1. 8P4yJlkPrI
  2. 40Pa9yvDOJWPZ0TLQG
  3. IvQVVe1dZrgXsgsFuqCPt
Product

shell-doped GaAs:Si NW with GaAs layer on bottom

Size: not specified

Medium: none

Support: Si/SiO2

Method 3

Type: Chemical synthesis
Source:
Starting materials
See all (4)
  1. VV4dEIcxsf
  2. a3E4tLaCZrFlow3ixi
  3. 9myqBJUatkEHFrPVzy4ICV
  4. tGXDylkUlX6BftMv6L9XX5DpgG
Product

shell-doped GaAs:Si NW with GaAs layer on bottom

Thickness: 100 nm

Medium: none

Support: Si/SiO2

Method 4

Type: Chemical synthesis
Source:
Starting materials
See all (4)
  1. wm76yHZBk4
  2. 8z2MEwOvKWxGFVIjog
  3. qGF5Vf6G1H23Kc7AwHG6Br
  4. 8iQW7iiZ3kPqpo4bRIIlfnVW8dDW4S
Product

shell-doped GaAs:Si NW with GaAs layer on bottom

Thickness: 100 nm

Medium: none

Support: Si/SiO2

Method 5

Type: Chemical synthesis
Source:
Starting materials
See all (4)
  1. typcm79PnH
  2. YWFWWgTqo7aCSSd3lk
  3. DBtVBULaL2sQ5d66vvdzPl
  4. t26hkZaxDaXUUY5d9Hhku6y55kS39su
Product

shell-doped GaAs:Si NW with GaAs layer on bottom

Thickness: 100 nm

Medium: none

Support: Si/SiO2

References

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