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nano-hole structured GaN substrate

Based on

22 Articles
2 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN p-GaN u-GaN i-GaN
Type Single Compound
Formula GaN
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
chopped light-induced photocurrent

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • nitrogen plasma
  • gallium
Product

nano-hole structured GaN substrate

RMS roughness: 1.2 nm

Thickness: 100 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethanidogallium
  1. kqBCrVSACTpEreOqJZIHSU6gI3ifOBCXp5LWewG161lbahfVp
  2. 2Z2RgZ
Product

nano-hole structured GaN substrate

Crystallite size: 5 - 10 nm

Thickness: <= 60 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • n-GaN
  1. wK9lwXAOMZza3TiJmRtTGZaqAeUuIRkRwi9H0MRb7eqHFWElh4m332YkC9n
Product

nano-hole structured GaN substrate

Pore diameter: ~ 50 nm

Thickness: ~ 20 - ~ 30 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • gallium nitride
Product

nano-hole structured GaN substrate

Thickness: 90 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • gallium nitride
  1. Ma4i0HrHArv2qwrEfkvnG1HzQWisX55j
  2. 0qiXM1W
Product

nano-hole structured GaN substrate

Grain size: ~ 50 nm

Thickness: 50 - 60 nm

Medium/Support: none

References

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