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example of p-type doped semiconductor shallow layer

Based on

8 Articles
2 Patents
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon

Type Single Compound
Formula Si
Role raw materials
2

tellurium

Type Single Compound
Formula Te
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier lifetime

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

example of p-type doped semiconductor shallow layer

Thickness: 100 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon hydride
Product

example of p-type doped semiconductor shallow layer

Thickness: 80 nm

Medium: none

Support: silicon dioxide

Method 3

Type: Chemical synthesis
Source:
Starting materials
  1. tDzL9
Product

example of p-type doped semiconductor shallow layer

Grain size: 1000 - 2000 nm

Thickness: 5 nm

Medium: none

Support: Si/SiO2

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silicon hydride
  1. AtL2tJSaaTZits68KMXhTHGn
  2. gcZ5i18xkNaih6Ax1eSBu3vFaGXthWN
Product

example of p-type doped semiconductor shallow layer

Thickness: 20 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • silicon hydride
  1. fQedCYMbqHFYuLNAntbiSGgJ
  2. ApxqsUD8h1itnFvdUFb4ePNNDyOFrDc
Product

example of p-type doped semiconductor shallow layer

Thickness: 20 nm

Medium/Support: none

References

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