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p-type BixSb2-xTe3 thermoelectric thin film

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

bismuth antimony telluride

Type Single Compound
Formula Bi0.57Sb1.43Te3
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier concentration

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
electron-probe X-ray microanalysis

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2/Si3N4 substrate
  • bismuth
  • antimony
See all (4)
  1. qTwCZq
Product

p-type BixSb2-xTe3 thermoelectric thin film

Grain size: ~ 45 nm

Thickness: 1210 nm

Medium: none

Support: Si/SiO2/Si3N4 substrate

References

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