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hole array-perforated silicon membrane

Based on

153 Articles
4 Patents
2018 Most recent source

Composition

1

single-crystalline silicon

single crystalline silicon monocrystalline silicon single-crystal silicon single crystalline Si crystalline silicon monocrystalline Si silicon sc-Si c-Si scSi cSi
Type Single Compound
Formula Si
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
absolute efficiency dependent on wavelength

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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energy storage
optoelectronics
photonics
power generation
raw materials/precursors/templates

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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field emission scanning electron microscopy
Raman spectroscopy
scanning electron microscopy
transmission electron microscopy
UV
UV-Vis-NIR optical spectroscopy
X-ray diffraction

Biological effects

Biological system Test details Nanomaterial Variant Source
male Sprague-Dawley rat

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

hole array-perforated silicon membrane

Height: 123-127 nm

Thickness: ~8 nm

Medium: none

Support: silicon

Method 2

Type: Physical formation
Source:
Starting materials
  • boron doped silicon wafer
  1. jpl6rOf
  2. Ci21S3b
  3. Hihg2mcFStziWF4
  4. TR21rm
Product

hole array-perforated silicon membrane

Rms roughness: 15.1 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • boron dopped silicon wafer
  1. GgRaQGk
  2. TFnsNw9
  3. IZHQDMkn
Product

hole array-perforated silicon membrane

Rms roughness: 15.1 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. v6k3Kd2wLlHMfw4f3JTiddcF6R3A54
Product

hole array-perforated silicon membrane

Height: 123-127 nm

Periodicity: 35 nm

Periodicity: 395 nm

Thickness: ~8 nm

Medium: none

Support: silicon dioxide/silicon

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • Si wafer
  1. Bnqb7YncigU7b6RmTW6y9jQM4rexgpmUYN
Product

hole array-perforated silicon membrane

Trench depth: ~ 1.65 nm

Medium/Support: none

References

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