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HfO2/GaN gate dielectric stack

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
leakage current density

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Characterization

Method Nanomaterial Variant Source
transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  1. YmHMEDIRAGouI8EXn5
Product

HfO2/GaN gate dielectric stack

Thickness: 20 nm

Thickness: 20000 nm

Medium/Support: none

References

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