Loading ...

AlGaAs/InAs nanostructured material

Based on

1 Articles
2011 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role layer
2

aluminium gallium arsenide

aluminum gallium arsenide AlGaAs
Type Complex Compound
Formula
Role layer
3

example of semiconductor nanoparticles

example of semiconductor quantum dots indium(III) arsenide quantum dots indium monoarsenide quantum dots indium arsenide quantum dots example of quantum dots InAs quantum dots InAs quantum dot InAs QD layer example of QD InAs QD
Type Nano Material
Formula
Role layer
4

aluminium gallium arsenide

aluminum gallium arsenide AlGaAs
Type Complex Compound
Formula
Role layer
5

doped AlGaAs

Type Complex Compound
Formula
Role layer
6

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
magnetoresistance dependent on temperature

More information available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • doped AlGaAs
  • aluminium gallium arsenide
  • low temperature gallium arsenide
See all (4)
Product

AlGaAs/InAs nanostructured material

Thickness: 10 nm

Thickness: 40 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:


Sign up for a free trial