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example of p-type doped semiconductor shallow layer

Based on

2 Articles
1 Patents
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

boron nitride

Type Single Compound
Formula BN
Role raw materials
2

iron

Type Single Compound
Formula Fe
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band structure plot

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Characterization

Method Nanomaterial Variant Source
atomic emission spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • magnesium nitride
  • ammonia borane
  1. rOWZlA7N1ORGkJ3Czp5r
  2. XeLAQ
  3. HIwA2pCS
  4. Tc8Hm1
Product

example of p-type doped semiconductor shallow layer

Thickness: 0.46 nm

Medium/Support: none

References

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