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boron-doped Ge0.975Sn0.025 alloy layer

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

boron-doped Ge0.975Sn0.025 alloy

Ge-Sn:B
Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Characterization

Method Nanomaterial Variant Source
X-ray diffraction

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Ge buffer layer on n-type Ge substrate
  • tin
  • boron
See all (4)
  1. rjna35K2r4ymmN
Product

boron-doped Ge0.975Sn0.025 alloy layer

Thickness: 90 nm

Medium: none

Support: P-doped Ge buffer layer on n-type Ge substrate

References

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