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silicon-doped indium phosphide nanowires

Based on

5 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon-doped indium phosphide

Si-doped InP
Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
depletion layer width

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • trimethylindigane
  • silicon hydride
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Product

silicon-doped indium phosphide nanowires

Length: 7000 nm

Radius: 120 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • diethylzinc
  • trimethylindigane
See all (4)
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Product

silicon-doped indium phosphide nanowires

Center-to-center pitch: 500 nm

Diameter: ~ 100 nm

Length: ~ 1500 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • trimethylindigane
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Product

silicon-doped indium phosphide nanowires

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • indium(III) phosphide
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Product

silicon-doped indium phosphide nanowires

Diameter: ~ 30 - ~ 65 nm

Length: 1200 - ~ 6000 nm

Medium/Support: none

References

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