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Si wafer

Based on

49 Articles
2018 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role raw materials
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
absorption

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Applications

Area Application Nanomaterial Variant Source
nanofluidics/microfluidics

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Characterization

Method Nanomaterial Variant Source
atomic emission spectroscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. gtULqbyrKEZuRuLSJcFDG
Product

Si wafer

Thickness: 100 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. wqt2ahZz1430beIkukOBtOk
  2. B9h5roDWH1I44hiNbMuUlPKAWnrWT1t4G1WpKvCRzUxtWXKeVMdoWh2hSOMpfMpaDdQB7XYTm444jN8JvZ0gCHuXY99BS7Z8yLkGWNnRMc9q3C6oy66R4q
Product

Si wafer

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 31 nm

Trench width: 250 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. mSPeRS6yBODaZqKK9Xkq18G
  2. 5mZfv9P6vcInT2qwsZ9qO49lxHFEKr4xmcUdE8yFpI0mCrtdQEEdjiNqDdntt3bquOB4VKjSaJgFVMoIDG01h7XGbJYzQkXdNZ6KyuBBt3UuiHWFKkS18a
Product

Si wafer

Mesa depth: ~ 47 nm

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 65 nm

Trench width: 250 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. QlSJxM16sGYFMXlB4rY6X9p
  2. z6lEWtLQEpfjNO3SjQqTWnuE5jvGtzrIMmneIDZdymS1HKCJXNOxiNH7V2VBSeOgLaDl8rRlt34vYvTvaxle6oG2E02wf2UPoS2cFBXUjkTcuZIQZJVAAr
Product

Si wafer

Mesa depth: ~ 29 nm

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 47 nm

Trench width: 250 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. ObN8FQI7CYIjeVMfqoX7nxh
  2. hxTMixkff9mB2IkxBmHsYSn5WSPNYidV7Dw89MQ0Wv48h2HWUoZ4Mnu2vikTamya01cKu4oi3pzthkeR5AsxFOLv22pJDcdHinJb1mkwmRG0SiymXtIqjo
Product

Si wafer

Mesa depth: ~ 55 nm

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 85 nm

Trench width: 250 nm

Medium/Support: none

References

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