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Based on

49 Articles
2018 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role raw materials
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
absorption

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Applications

Area Application Nanomaterial Variant Source
nanofluidics/microfluidics

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Characterization

Method Nanomaterial Variant Source
atomic emission spectroscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. 6iI2qXnjDyRQgiTtvQznfi6
  2. l5p87aXkxWPoYbO5AVCb7gJGlxqxfugkVtD36S2Oiprp1aimDH3H0RhTDAC0CnJv5QAGaZ7Ji8ColKQ6E9HtCaKujGtqBUUuo0DJWsugt3MZBWUY41pVlo
Product

Si wafer

Mesa depth: ~ 47 nm

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 65 nm

Trench width: 250 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. UOJz1XSmx9MhtF3zANqb8jy
  2. 5saDP8IiEtQL6ESQ2QM57SmiYF5ZUocM8XulNffIGWoAPAyXDgWjw5Jr6Oy42P6mKBTTPP7taBApdpNyvzbSzBvMt8UzwUHnOruNwwcCpMno8LxOCJCLVk
Product

Si wafer

Mesa depth: ~ 29 nm

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 47 nm

Trench width: 250 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. 8CrH0FKELfiZhzSDsCwlZTV
  2. JWgDw4BKRwoLXjYnXih7YsCux6ye6OO862vP4SyDe81QD9SlEbQDZMm6tIqJYSFUchFlZ5CxeHkj9sipDJwF0tTcIfwAlFjWLC4qlUHmJrRjv5ABexStqK
Product

Si wafer

Mesa depth: ~ 55 nm

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 85 nm

Trench width: 250 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. 1lo8Hqz3zYeFz6PelRD15
Product

Si wafer

Thickness: 100 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. uLMVLNnLaMDOxAtL2GYzeTh
  2. DVnmDaFeB4zuxtFxTd4u1FRX2oQmd6FJh6xvSpTk7kLc6LUwpr2MTEAc40I5Za9TkInJJIcbTSizmF7KYDPkuymPwpodrQZoAIjfSZogyIu2lDWO8mh8yN
Product

Si wafer

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 31 nm

Trench width: 250 nm

Medium/Support: none

References

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